JPH01143221U - - Google Patents
Info
- Publication number
- JPH01143221U JPH01143221U JP3946188U JP3946188U JPH01143221U JP H01143221 U JPH01143221 U JP H01143221U JP 3946188 U JP3946188 U JP 3946188U JP 3946188 U JP3946188 U JP 3946188U JP H01143221 U JPH01143221 U JP H01143221U
- Authority
- JP
- Japan
- Prior art keywords
- heater
- wire stripper
- blade part
- cable
- strips
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims description 2
- 239000012774 insulation material Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
Landscapes
- Removal Of Insulation Or Armoring From Wires Or Cables (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3946188U JPH01143221U (en]) | 1988-03-25 | 1988-03-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3946188U JPH01143221U (en]) | 1988-03-25 | 1988-03-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01143221U true JPH01143221U (en]) | 1989-10-02 |
Family
ID=31265964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3946188U Pending JPH01143221U (en]) | 1988-03-25 | 1988-03-25 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01143221U (en]) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
| US7208413B2 (en) | 2000-06-27 | 2007-04-24 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7235492B2 (en) | 2005-01-31 | 2007-06-26 | Applied Materials, Inc. | Low temperature etchant for treatment of silicon-containing surfaces |
| US7312128B2 (en) | 2004-12-01 | 2007-12-25 | Applied Materials, Inc. | Selective epitaxy process with alternating gas supply |
| US7560352B2 (en) | 2004-12-01 | 2009-07-14 | Applied Materials, Inc. | Selective deposition |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5532660B2 (en]) * | 1975-08-15 | 1980-08-26 |
-
1988
- 1988-03-25 JP JP3946188U patent/JPH01143221U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5532660B2 (en]) * | 1975-08-15 | 1980-08-26 |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7208413B2 (en) | 2000-06-27 | 2007-04-24 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7501343B2 (en) | 2000-06-27 | 2009-03-10 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
| US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| US7312128B2 (en) | 2004-12-01 | 2007-12-25 | Applied Materials, Inc. | Selective epitaxy process with alternating gas supply |
| US7521365B2 (en) | 2004-12-01 | 2009-04-21 | Applied Materials, Inc. | Selective epitaxy process with alternating gas supply |
| US7560352B2 (en) | 2004-12-01 | 2009-07-14 | Applied Materials, Inc. | Selective deposition |
| US7572715B2 (en) | 2004-12-01 | 2009-08-11 | Applied Materials, Inc. | Selective epitaxy process with alternating gas supply |
| US7235492B2 (en) | 2005-01-31 | 2007-06-26 | Applied Materials, Inc. | Low temperature etchant for treatment of silicon-containing surfaces |